MSB7N80

800V N-Channel MOSFET

MSF7N80

800VN-ChannelMOSFET

MTW7N80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTW7N80E

TMOSPOWERFET7.0AMPERES800VOLTSRDS(on)=1.0OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MTW7N80E

N?묬hannelPowerMOSFET

NJ7N80

7.0A800VN-CHANNELPOWERMOSFET

NJ7N80-BL

7.0A800VN-CHANNELPOWERMOSFET

NJ7N80F-LI

7.0A800VN-CHANNELPOWERMOSFET

NJ7N80-LI

7.0A800VN-CHANNELPOWERMOSFET

RMP7N80TI

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest