丝印：MS14；Package：VQFN；HEX SCHMITT-TRIGGER INVERTER

1FEATURES • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation • Ioff Supports Partial-Power-Down Mode Operation • Sub-1-V Operable • Max tpd of 2 ns at 1.8 V • Low Power Consumption, 10-mA Max ICC • ±8-mA Output Drive at 1.8 V • Latch-Up Perfo

文件：987.06 Kbytes 页数：13 Pages

TI

德州仪器

丝印：MS14；Package：VQFN；HEX SCHMITT-TRIGGER INVERTER

1FEATURES • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation • Ioff Supports Partial-Power-Down Mode Operation • Sub-1-V Operable • Max tpd of 2 ns at 1.8 V • Low Power Consumption, 10-mA Max ICC • ±8-mA Output Drive at 1.8 V • Latch-Up Perfo

文件：987.06 Kbytes 页数：13 Pages

TI

德州仪器

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,

文件：109.87 Kbytes 页数：3 Pages

PANJIT

強茂

SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Metal to silicon rectifier. majority carrier conduction • Guard ring for overvoltage protection • Low power loss,high efficiency • For surface mounted applications • High current capacity ,Low forward

文件：6.09774 Mbytes 页数：2 Pages

KISEMICONDUCTOR

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. KEY FEATURES ■ 150 MHz ■ 7.5 Volts ■ Common Emitter ■ POUT = 2.5 W Min. ■ GP = 11.0 dB Gain APPLICATIONS/BE

文件：51.47 Kbytes 页数：4 Pages

Microsemi

美高森美

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. Features • 150 MHz • 7.5 Volts • Common Emitter • POUT = 2.5 W Min. • GP = 11.0 dB Gain

文件：91.88 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES ◾ 450 - 512 MHz ◾ 12.5 Volts ◾ Efficiency 55 ◾ POUT =

文件：61.25 Kbytes 页数：4 Pages

Microsemi

美高森美

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 450 - 512 MHz • 12.5 Volts • Efficiency 55 • POUT = 2.

文件：90.34 Kbytes 页数：3 Pages

ADPOW

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. Features • 175 MHz • 7.5 Volts • Common Emitter • POUT = 1.4 W Min. • GP = 7.0 dB Gain

文件：91.31 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. KEY FEATURES ◾ 175 MHz ◾ 7.5 Volts ◾ Common Emitter ◾ POUT = 1.4 W Min. ◾ GP = 7.0 dB Gain APPLICATIONS/BENEFI

文件：176.21 Kbytes 页数：4 Pages

Microsemi

美高森美