MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

文件：153.07 Kbytes 页数：6 Pages

Motorola

摩托罗拉

SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS

Features Compact, thin profile package design Ideal for SMT manufacturing

文件：237.85 Kbytes 页数：2 Pages

SY

顺烨电子

SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS

Features Compact, thin profile package design Ideal for SMT maunfacturing Reliable robust construction

文件：238 Kbytes 页数：2 Pages

SY

顺烨电子

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MSC3005 is Designed for Class C Amplifier Applications up to 3 GHz. FEATURES: • POUT = 5.0 W Typ. at 3 GHz • Common Base Configuration • Omnigold™ Metellization System

文件：16.129 Kbytes 页数：1 Pages

ASI