MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

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MOTOROLA

摩托罗拉

30A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Super-Fast Switching for High Efficiency ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

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WTE

Won-Top Electronics

UHF POWER TRANSISTOR NPN SILICON

The TP3005 is designed for 960MHz base stations in bothanalog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • Specified 26 Volts, 960 MHz Characteristics Output Power = 4.0 Watt

文件：110.67 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SDH/SONET STM1/OC3 and STM4/OC12 transceiver

文件：127.17 Kbytes 页数：28 Pages

PHI

PHI