GALLIUM ARSENIDE PHEMT

3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. • Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 6 Vo

文件：337.89 Kbytes 页数：8 Pages

Motorola

摩托罗拉

Gallium Arsenide PHEMT RF Power Field Effect Transistor

文件：132.28 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT

OverviewReplaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. The MRFG35003M6T1 is designed for 3.5 GHz WLL/MMDS/BWAor UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equip \n•Typical W–CDMA Performance:  –42 dBc ACPR, 3.55 GHz, 6 Volts,\nIDQ = 180 mA\nOutput Power: 450 mWatts\n\tPower Gain: 9 dB\n\tEfficiency: 24%\n\n\n•3 Watts P1dB @ 3.55 GHz\n\n•Excellent Phase Linearity and Group Delay Characteristics\n\n•High Gain, High Efficiency and High Linearity\n\n•In Tap;

恩XP

恩智浦

Gallium Arsenide PHEMT RF Power Field Effect Transistor

文件：132.28 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体