MRFE6VP61K25HS

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V; • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate Biasing\n• Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• RoHS Compliant\n• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.\n• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.\nNOTE: PARTS ARE PUSH–PULL;

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

MRFE6VP61K25HSR6

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

RFPowerLDMOSTransistors HighRuggednessN--Channel Enhancement--ModeLateralMOSFETs ThesehighruggednessdevicesaredesignedforuseinhighVSWRindustrial(includinglaserandplasmaexciters),broadcast(analoganddigital),aerospaceandradio/landmobileapplications.Theyareunmatc

MRFE6VP61K25HSR5

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

MRFE6VP61K25HSR6

RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs

MRFE6VP61K25HSR6

RF Power LDMOS Transistors