MRFE6VP61K25HR6中文资料飞思卡尔数据手册PDF规格书

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

• Typical Performance: VDD = 50 Volts, IDQ = 100 mA

Features

• Unmatched Input and Output Allowing Wide Frequency Range Utilization

• Device can be used Single--Ended or in a Push--Pull Configuration

• Qualified Up to a Maximum of 50 VDD Operation

• Characterized from 30 V to 50 V for Extended Power Range

• Suitable for Linear Application with Appropriate Biasing

• Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 20.