865-900 MHz，47 W平均值，28 V，单载波N-CDMA横向N信道射频功率MOSFET

The MRFE6P9220HR3 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–source amplifier applications in 28 volt base station equipment. • Typical Single–Carrier N–CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain: 20 dBDrain Efficiency: 30%ACPR @ 750 ;

恩XP

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

865-900 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applicati

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

TO270-2

FREESCAL

上传：深圳市正纳电子有限公司

TO-252

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市赛尔通科技有限公司

高频管

Freescale/飞思卡尔

上传：深圳市翔睿腾科技有限公司