RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt ana

文件：427.98 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt ana

文件：427.98 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：451.38 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：451.38 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

860 MHz，300 W，32 V射频功率LDMOS

The MRFE6P3300HR3 is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equ • Typical Narrowband Two-Tone Performance @ 860 MHz, VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEPPower Gain: 20.4 dBDrain Efficiency: 44.8%IMD: –28.8 dBc\n• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness\n• Characterized with Series Equi;

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