MRFE6P3300HR3中文资料飞思卡尔数据手册PDF规格书

860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment.

• Typical Narrowband Two-Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP

Power Gain — 20.4 dB

Drain Efficiency — 44.8

IMD — -28.8 dBc

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

特性 Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Designed for Push-Pull Operation Only

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.