RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common− source amplifier applications in 26 volt base station equipment. • Typical Per

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common− source amplifier applications in 26 volt base station equipment. • Typical Per

文件：316.12 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base st

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Motorola

摩托罗拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：223.06 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：223.06 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

920-960 MHz, 75 W, 26 V Lateral N-Channel RF Power MOSFETs

OverviewMRF9080LR3, MRF9080LSR3 removed from active portfolio. View replacement partsvia Part Number Search. \n•Typical Performance for GSM Frequencies, 960 MHz, 26 Volts\nOutput Power @ P1db: 75 Watts\n\tPower Gain @ P1db: 18.5 dB\n\tEfficiency @ P1db: 55%\n\n•Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power\n\n•Internally Matched for Ease of Use\n\n•High Gain, High Efficiency;

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