Reliable Solid State Operation

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LSTD

莱尔德

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ)

文件：148.54 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF Power FET 150W, to 150MHz, 50V

Designed primarily for linear large-signal output stages up to 150 MHz • Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.) • Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45 (

文件：285.58 Kbytes 页数：9 Pages

MA-COM

SILICON RF POWER MOSFET

DESCRIPTION: The MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

文件：19.91 Kbytes 页数：1 Pages

ASI