NDP6050L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

NDP6050L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NEURON6050

IPProcessorforIzoTTMEnabledDevices

NJU6050

HighEfficiencyWhiteLEDDriver

OF6050

Silanolterminatedvinylmethylsiloxane-dimethylsiloxanecopolymer

OM6050SJ

HIGHCURRENTMOSFETINISOLATED,TO-267HERMETICPACKAGE,SIZE7DIE,LOWRDS(on)

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.TheyareideallysuitedforMilitaryrequirementswheresmallsize,highperformanceandhighreliabilityarerequired,andinapplicationssuchasswitchingpowersupplies,moto

PE6050

SMCJACKRESISTORTERMINATION

PE6050K

N-ChannelMOSFETusesadvancedtrenchtechnology

PI6050D

ContactImageSensor

PJM6050NTK

SingleN?묬hannelPowerMOSFET