丝印：MPSA06；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Power amplifier

文件：1.043099 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：MPSA06；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Power amplifier

文件：1.043099 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：MPSA06；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Power amplifier

文件：1.043099 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：MPSA06；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Power amplifier

文件：1.043099 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

NPN Silicon Epitaxial Planar Transistor

PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications

文件：299.97 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

TO-92 Transistor (NPN)

Features ◇ Power amplifier

文件：844.22 Kbytes 页数：3 Pages

TGS

NPN SMALL SIGNAL TRANSISTOR

Features Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages

文件：151.83 Kbytes 页数：1 Pages

TRSYS

Transys Electronics

Amplifier Transistors

Amplifier Transistors Voltage and current are negative for PNP transistors

文件：239.87 Kbytes 页数：6 Pages

Motorola

摩托罗拉

NPN Silicon Transistor

Feature: •NPN Silicon Planar Epitaxial RF Transistor

文件：199.55 Kbytes 页数：2 Pages

MULTICOMP

易络盟

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: MPSA05: 60 V MPSA06: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.3 Kbytes 页数：1 Pages

WINNERJOIN

永而佳