Package：HC-49/U；包装：散装 类别：晶体，振荡器，谐振器 晶体 描述：CRYSTAL 32.7680MHZ 18PF TH

CTS-Frequency Controls

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

文件：166.78 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time

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NTE

3W High Power Laser Diode

Description The SLD327YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 3.0W • High-optical power density: 3W/2

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SONYSony Corporation

索尼