Package：轴向；包装：散装 类别：电阻器 通孔式电阻器 描述：RES 100 OHM 5% 2W AXIAL

OHMITE

HEAVY THREE TOWER MODULES STANDARD RECTIFIER

文件：467.67 Kbytes 页数：2 Pages

AMERICASEMI

HEAVY THREE TOWER MODULES STANDARD RECTIFIER

文件：467.67 Kbytes 页数：2 Pages

AMERICASEMI

1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the the

文件：41.14 Kbytes 页数：6 Pages

NEC

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