MOCD223R2VM中文资料安森美半导体数据手册PDF规格书

特性 Features

• High Current Transfer Ratio of 500% Minimum at IF = 1 mA

• Minimum BVCEO of 30 V Guaranteed

• Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050 Lead Spacing

• Safety and Regulatory Approvals:

– UL1577, 2,500 VACRMS for 1 Minute

– DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage

Applications

• Low Power Logic Circuits

• Interfacing and Coupling Systems of Different Potentials and Impedances

• Telecommunications Equipment

• Portable Electronics

• Solid State Relays

描述 Description

The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dualchannel version of the MOC223M. They are ideally suited for high density applications, and eliminates the need for through the board mounting.