MOC215-M数据手册ONSEMI中文资料规格书

描述 Description

DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.FEATURES
• UL Recognized (File #E90700, Volume 2)
• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)
• Convenient Plastic SOIC–8 Surface Mountable Package Style
• Low LED Input Current Required, for Easier Logic Interfacing
• Standard SOIC–8 Footprint, with 0.050” Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input–Output Isolation of 2500 Vac (rms) GuaranteedAPPLICATIONS
• Low power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications equipment
• Portable electronics

特性 Features

• UL Recognized (File #E90700, Volume 2)
• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)
• Convenient Plastic SOIC–8 Surface Mountable Package Style
• Low LED Input Current Required, for Easier Logic Interfacing
• Standard SOIC–8 Footprint, with 0.050” Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input–Output Isolation of 2500 Vac (rms) Guaranteed

应用 Application

• Low power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications equipment
• Portable electronics