MOC211R1VM数据手册ONSEMI中文资料规格书

描述 Description

DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through-the-board mounting.FEATURES
• UL Recognized (File #E90700, volume 2)
• VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Standard SOIC-8 Footprint, with 0.050\" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 VAC(rms) Guaranteed
• Minimum BVCEO of 30V guaranteedAPPLICATIONS
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor and Detection Circuits

特性 Features

• UL Recognized (File #E90700, volume 2)
• VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Standard SOIC-8 Footprint, with 0.050\" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 VAC(rms) Guaranteed
• Minimum BVCEO of 30V guaranteed