Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or r

文件：1.35533 Mbytes 页数：28 Pages

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Heterojunction Bipolar Transistor

文件：1.17921 Mbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or r

文件：1.35533 Mbytes 页数：28 Pages

恩XP

Heterojunction Bipolar Transistor

文件：1.17921 Mbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

400-1000 MHz，31.7 dB，29.6 dBm InGaP HBT

The MMZ09312BT1 is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such • Frequency: 400-1000 MHz\n• P1dB: 29.6 dBm @ 900 MHz\n• Power Gain: 31.7 dB @ 900 MHz\n• OIP3: 42 dBm @ 900 MHz\n• Active Bias Control (adjustable externally)\n• Single 3 to 5 Volt Supply\n• Performs Well with Digital Predistortion Systems\n• Single-ended Power Detector\n• Cost-effective 12-pin, 3 ;

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