MMRF1011HS数据手册恩XP中文资料规格书

描述 Description

The MMRF1011HR5 and MMRF1011HSR5 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulse applications, such as L-Band radar.

特性 Features

• Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%Power Gain: 18 dBDrain Efficiency: 60.5%
• Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 300 W Peak Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.