Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V

The MMRF1011HR5 and MMRF1011HSR5 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulse applications, such as L-Band radar. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%Power Gain: 18 dBDrain Efficiency: 60.5%\n• Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 300 W Peak Power\n• Characterized with Series Equivalen;

恩XP

恩智浦

RF Power LDMOS Transistors

文件：645.82 Kbytes 页数：13 Pages

恩XP

Cold Cathode Fluorescent Lamp Driver

General Description The MP1011A is a Power IC offering a complete solution for driving one or more Cold Cathode Fluorescent Lamps (CCFL). This Power IC converts unregulated DC voltage to a nearly pure sine wave required to ignite and operate the CCFL. Based on proprietary power topology and pat

文件：128.87 Kbytes 页数：6 Pages

MPS

美国芯源

Cold Cathode Fluorescent Lamp Driver

General Description The MP1011A is a Power IC offering a complete solution for driving one or more Cold Cathode Fluorescent Lamps (CCFL). This Power IC converts unregulated DC voltage to a nearly pure sine wave required to ignite and operate the CCFL. Based on proprietary power topology and pat

文件：128.87 Kbytes 页数：6 Pages

MPS

美国芯源

Ultra-Wide Input, 10W Compact, Railway DC/DC Converters

文件：720.53 Kbytes 页数：4 Pages

MPD