RF Power Field Effect Transistors

文件：855.42 Kbytes 页数：17 Pages

恩XP

RF Power Field Effect Transistors

文件：855.42 Kbytes 页数：17 Pages

恩XP

RF Power Field Effect Transistors

文件：855.42 Kbytes 页数：17 Pages

恩XP

965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power transistors, MMRF1007HR5 and MMRF1007HSR5, are designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%Power Gain: 20 dBDrain Efficiency: 56%\n• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power\n• Characterized with Series Equivalen;

恩XP

恩智浦

Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V

RF Power transistors, MMRF1007HR5 and MMRF1007HSR5, are designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%Power Gain: 20 dBDrain Efficiency: 56%\n• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power\n• Characterized with Series Equivalen;

恩XP

恩智浦