Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V

RF Power transistors, MMRF1007HR5 and MMRF1007HSR5, are designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%Power Gain: 20 dBDrain Efficiency: 56%\n• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power\n• Characterized with Series Equivalen;

恩XP

恩智浦

RF Power Field Effect Transistors

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恩XP

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • POUT = 150 WATTS • GP = 14 dB MINIMUM •

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ADPOW

Low-Noise, Precision Op Amp

General Description The Maxim MXL1007 operational amplifier features low-noise, ±15V performance: 2.5nV√Hz wideband noise, 1/f corner frequency of 2Hz, and 60nVp-p 0.1Hz to 10Hz noise. Precision and speed performance includes 10μV typical offset voltage, 0.2μV/°C drift, 130dB CMRR and PSRR, and a

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Maxim

美信

Low-Noise, Precision Op Amp

General Description The Maxim MXL1007 operational amplifier features low-noise, ±15V performance: 2.5nV√Hz wideband noise, 1/f corner frequency of 2Hz, and 60nVp-p 0.1Hz to 10Hz noise. Precision and speed performance includes 10μV typical offset voltage, 0.2μV/°C drift, 130dB CMRR and PSRR, and a

文件：246.21 Kbytes 页数：8 Pages

Maxim

美信