Low Noise Amplifier

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Enhancement Mode pHEMT Technology (E--pHEMT)

Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML20211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell,

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Low Noise Amplifier

文件：580.65 Kbytes 页数：20 Pages

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1400-2800 MHz，18.6 dB，21.3 dBm，0.65 dB NF E-pHEMT LNA

The MML20211HT1 is a single-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front-end cir • Ultra Low Noise Figure: 0.65 dB @ 2140 MHz\n• Frequency: 1400-2800 MHz\n• High Reverse Isolation: –35 dB @ 2140 MHz\n• P1dB: 21.3 dBm @ 2140 MHz\n• Small-Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)\n• Third Order Output Intercept Point: 33 dBm @ 2140 MHz\n• Active Bias Control (adjusta;

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