MMJT350T1数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.

特性 Features

• High Collector-Emitter Sustaining Voltage-VCEO(sus) = 300 Vdc @ IC= 1.0 mAdc
• Excellent DC Current Gain -hFE = 30–240 @ IC= 50 mAdc
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
• These Devices are PbFree, Halogen Free/BFR Free and are RoHSCompliant

简介

MMJT350T1属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MMJT350T1晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。