小信号金氧半電晶體

ST

意法半导体

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

文件：295.71 Kbytes 页数：6 Pages

Motorola

摩托罗拉

20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET

文件：627.94 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET

文件：675.87 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体