订购数量 | 价格 |
---|---|
1+ |
首页>MMDFS6N303R2>详情
MMDFS6N303R2_ONSEMI/安森美半导体_MOSFET N-CH 30V 6A 8-SOIC创新迹商城
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
MMDFS6N303R2
- 功能描述:
MOSFET N-CH 30V 6A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
FETKY™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商
相近型号
- MMDFS2P102R2G
- MMDJ3P03BJT
- MMDFS2P102R2
- MMDJ3P03BJTR2
- MMDJ3P03BJTR2G
- MMDJ-65608EV-30-E
- MMDF7N02ZR2G
- MMDJ-65608EV-30MQ
- MMDF7N02ZR2
- MMDF7N02Z
- MMDJ-65608EV-30SV
- MMDF7N02HD
- MMDJ-65608EV-E
- MMDF7N02ER2G
- MMDJ-65608EV-SO-E
- MMDF7N
- MMDJ-65609EV-40-E
- MMDF70N02ZR2
- MMDJ-65609EV-40SV
- MMDJ-65609EV-40-SV
- MMDF6N03HDR2G
- MMD-JGDZIR47M-R1
- MMDF6N03HDR2
- MMD-JGDZIR47M-R1-RM
- MMDF6N03HD
- MMD-JGDZNR22MER1
- MMDF6N03DR2
- MMD-JGEEIR30MJR1
- MMD-JGEE-R10M-M1
- MMDF6N02HDR2G
- MMD-JGEZR30MJM1
- MMDF6N02HDR2(D6N02)
- MMDJ-M65608EV-30MQ
- MMDF6N02HDR2
- MMDK-1030HCH
- MMDF6N02HDR
- MMDKK2020T100MM
- MMDF6N02HD
- MMDF6N02DR2
- MMDL101
- MMDF5N03Z
- MMDL101T1
- MMDL101T1G
- MMDF5N02ZR2G
- MMDL101T1G-7
- MMDF5N02ZR2
- MMDF5N02Z
- MMDL301
- MMDF5N022R
- MMDL301LT1G