订购数量 | 价格 |
---|---|
1+ |
首页>MMDFS6N303R2>芯片详情
MMDFS6N303R2_ONSEMI/安森美半导体_MOSFET N-CH 30V 6A 8-SOIC星佑电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
MMDFS6N303R2
- 功能描述:
MOSFET N-CH 30V 6A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
FETKY™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商
相近型号
- MMDF6N02HDR2
- MMDL101T1G-7
- MMDF3N04HDR2G
- MMDF3N04HDR2
- MMDL301LT1
- MMDF3N04HD
- MMDL301LT1G
- MMDF3N03HDR2(D3N03)
- MMDL301T1G
- MMDF3N03HDR2
- MMDL301T1G-7
- MMDF3N03HD
- MMDL6050T1G
- MMDF3N02HDR2G
- MMDL770T1G
- MMDF3N02HDR2
- MMDL770T1G-7
- MMDF2P102R2
- MMDF2P03HD
- MMDL914
- MMDF2P02HDR2G
- MMDL914T1G
- MMDF2P02HDR2
- MMDL914T3G
- MMDF2P02ER2
- MMDOE56G5MXP-0VB00
- MMDF2P01HDR2
- MMDP65656EV40MBP
- MMDF2N05ZR2
- MMDP-67204HV-15-E
- MMDF2N02ER2G
- MMDS25254HT1
- MMDF2C03HDR2G
- MMDT2222
- MMDF2C03HD
- MMDT2222A
- MMDF2C02ER2
- MMDT2222A-7-F
- MMDF1N05ER2G
- MMDC914T1G
- MMDT2222V-7
- MMDB45-0805
- MMDT2227
- MMDB4
- MMDT2227-7-F
- MMDB30-B11
- MMDT2227M-7
- MMDB3
- MMDT2227Q-7-F
- MMD70R900PRH