MMD80R1K2P

800V 1.2(ohm) N-channel MOSFET

MMD80R1K2PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMD80R1K2PRH

800V 1.2(ohm) N-channel MOSFET

MMF80R1K2P

iscN-ChannelMOSFETTransistor

MMF80R1K2PB

800V1.2ohmN-channelMOSFET

MMF80R1K2PBTH

800V1.2ohmN-channelMOSFET

MMF80R1K2PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMF80R1K2QZ

800V1.2ΩN-channelMOSFET

Description MMF80R1K2QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MMF80R1K2QZTH

800V1.2ΩN-channelMOSFET

Description MMF80R1K2QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

NCE80R1K2I

N-ChannelSuperJunctionPowerMOSFET