MMBZ16VALT1G中文资料Dual Common Anode Zener Diode Protection数据手册ONSEMI规格书

描述 Description

These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

特性 Features

• Working Peak Reverse Voltage Range - 3 V to 26 V
• Wide Range of Zener Breakdown Voltages
• SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range - 5.6 V to 33 V
• Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional)
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage
• Flammability Rating UL 94V-O Mechanical Characteristics:
• CASE: Void-free, transfer-molded, thermosetting plastic case
• FINISH: Corrosion resistant finish, easily solderable
• MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 degrees C for 10 Seconds
• Package designed for optimal automated board assembly
• Small package size for high density applications
• Available in 8 mm Tape and Reel
• Pb-Free Packages are Available
• AEC-Q101 Qualified and PPAP Capable
• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

应用 Application

• Voltage Regulation
• Waveform Clipping
• MOSFET Gate Protection
• General Usage Device: Suitable for many different end products

简介

MMBZ16VALT1G属于分立半导体产品的二极管-齐纳-阵列。由制造生产的MMBZ16VALT1G二极管 - 齐纳 - 阵列齐纳二极管不仅允许电流从阳极流向阴极，而且当达到齐纳电压时，电流也可以反向流动。此类器件可用作电压基准，以及用来调节小型电路上的电压。齐纳二极管网络或阵列是由两个或更多个二极管组成的采用单一表贴封装的器件。这些二极管可以彼此隔离，或连接成共阳极或共阴极电路类型。