SS2712KUA

HallLatch-HighSensitivity

SS2712LSOT

HallLatch-HighSensitivity

SS2712LUA

HallLatch-HighSensitivity

TCD2712DG

TOSHIBACCDLinearImageSensorCCD

TheTCD2712DGisahighsensitiveandlowdarkcurrent7500 elements3linesoutputCCDcolorlinearimagesensor. Thedevicecontainsarowof7500elements3linesphotodiodes whichprovide24lines/mmacrossaA3sizepaper.Thedeviceis operatedby5.0Vpulseand10Vpowersupply.

TMD2712

ALSProximitySensorModule

Features •Tiny1mmx2mmx0.5mmmodule •1.8Vpowersupplywith1.8VI²Cbus •Sleepmode(0.7μA) •VCSELIRemitter •Integratedfactorycalibrated940nmIRVCSEL •Crosstalkandambientlightcancellation •Wideconfigurationrange •Highsensitivity •2channels(photopicALS+IR)

TW2712

TW2710andTW2712SingleBandGNSSAntennas

UPA2712GR

P-Channel30-V(D-S)MOSFET

UPA2712GR

SWITCHINGP-CHANNELPOWERMOSFET

UPA2712GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2712GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=21mΩMAX.(VGS=−4.5V,

UPC2712T

2.6GHzWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT

DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a