MMBT5401-L

Marking：2L；Package：SOT-23；PNP Transistors

Features ●HighVoltageTransistors ●Pb-FreePackagesareAvailable

MMBT5401-L

PNP Transistors

MMBT5401-L

PNP Transistors

MMBT5401T

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highvoltage,complementaryPairwithMMBT5551T Applications Generalpurposehighvoltageamplifier.

MMBT5401-TP

PNPPlasticEncapsulateTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •CollectorCurrent:ICM=0.6A •Collector-BaseVoltage:V(BR)CBO=160V •OperatingAndStorageTemperatures–55°Cto150°C •Capableof0.3WattsofPowerDissipation •Marking:2L •LeadFreeFinish/RoHSCompliant(PSuffix

MMBT5401W

Plastic-EncapsulateTransistor

FEATURE •IdealforMediumPowerAmplificationandSwitching •AlsoAvailableinLeadFreeVersion •ComplementarytoMMBT5551W

MMBT5401W

HighVoltageTransistor

Features •NSVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

MMBT5401W

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-323PlasticPackage. Features Highvoltage,complementaryPairwithMMBT5551W. Applications Generalpurposehighvoltageamplifier.

MMBT5401W

SOT-323Plastic-EncapsulateTransistors

MMBT5401W

TRANSISTOR(PNP)

FEATURES ComplementarytoMMBT5551W SmallSurfaceMountPackage IdealforMediumPowerAmplificationandSwitching