MMBT5401T

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highvoltage,complementaryPairwithMMBT5551T Applications Generalpurposehighvoltageamplifier.

MMBT5401W

Plastic-EncapsulateTransistor

FEATURE •IdealforMediumPowerAmplificationandSwitching •AlsoAvailableinLeadFreeVersion •ComplementarytoMMBT5551W

MMBT5401W

HighVoltageTransistor

Features •NSVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

MMBT5401W

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-323PlasticPackage. Features Highvoltage,complementaryPairwithMMBT5551W. Applications Generalpurposehighvoltageamplifier.

MMBT5401W

SOT-323Plastic-EncapsulateTransistors

MMBT5401W

TRANSISTOR(PNP)

FEATURES ComplementarytoMMBT5551W SmallSurfaceMountPackage IdealforMediumPowerAmplificationandSwitching

MMDT5401

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMDT5551) •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(No

MMDT5401

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

MMDT5401

Plastic-EncapsulateTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Marking:K4M •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •EpitaxialPlanarDieConstruction •EpoxymeetsUL94V-0flammabilityrating •Moi

MMDT5401

Multi-Chip(PNPPNP)Transistor