MMBT5089L中文资料NPN 双极晶体管数据手册ONSEMI规格书

描述 Description

This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications.The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

特性 Features

• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT-23 Surface Mount Package Saves Board Space
• Pb-Free Packages are Available
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

简介

MMBT5089L属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的MMBT5089L晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。