首页 >MMBT3904(1E)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
40VMatchedPairNPNSmallSignalTransistors | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
NPNPlasticEncapsulatedTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
NPNSiliconGeneralPurposeDoubleTransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
Epitaxialplanardieconstruction | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 | YEASHIN | ||
SOT-363Plastic-EncapsulateTransistors FEATURES eEpitaxialplanardieconstruction eIdealforlowpoweramplificationandswitching | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Smallsignalapplication | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
40VNPNSMALLSIGNALTRANSISTORINDFN0806 Features •BVCEO>40V •IC=200mAhighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2packagefootprint,16timessmallerthanSOT23 •0.4mmheightpackageminimizingoff-boardprofile •ComplementaryPNPTypeMMBT3906FA •TotallyLead-Free&FullyRoHScompliant(Notes1 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
GeneralPurposeTransistor FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable(MMBT3906FW) ●IdealforMediumPowerAmplificationandSwitching | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
40VNPNSMALLSIGNALTRANSISTORINDFN0606 | DIODESDiodes Incorporated 美台半导体 | DIODES |
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