MMA121AA数据手册Microchip中文资料规格书

描述 Description

MMA121AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high- electron-mobility transistor (pHEMT) distributed amplifier that operates between DC and 67 GHz. It is ideal for test instrumentation and wide-band military and space applications. The amplifier provides a gain of 13.5 dB, Psat of 20dBm at 35GHz and 13dBm at 65GHz with a nominal bias condition of 200 mA from a 7V supply. The die has a built in Bias network allowing smooth operation from 1 to > 67GHz, for operation below 1GHz an external choke network should be used. Output IP3 is typically 32 dBm at 35GHz. The MMA121AA amplifier is DC coupled and features RF I/Os that are internally matched to 50 Ω.

特性 Features

Frequency range: DC to 67 GHz
Gain: 13 dB
High Power: 15dBm @ 65GHz
Supply: 7 V at 200 mA
Integrated On-chip Bias
Handle high power input 20dBm
50 Ω matched input/output
Die size: 1.15 x 1.65 x 0.1 mm