MMA044PP3数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a plastic leadless 3 mm × 3 mm surface-mount package that operates between 6 GHz and 18 GHz. The MMA044PP3 amplifier provides 17 dB of gain, 2.0 dB noise figure, 14 dBm P1dB, and 28 dBm output IP3. The amplifier draws only 100 mA of current from a 4 V supply. The P1dB power of 14 dBm enables the LNA to function as an LO driver. The RF input and output ports of the amplifier are DC blocked and internally matched to 50 Ω. This product is also available in die format as the MMA044AA.

特性 Features

Low-noise figure: 2.0 dB from 6 GHz–12 GHz
50 Ω matched input/output
High gain: 17 dB from 6 GHz–18 GHz
Broadband performance: 6 GHz–18 GHz
Excellent P1dB output power: 14 dBm
High OIP3: 28 dBm
Single-supply operation: 4 V
Package: compact 16-lead 3 mm × 3 mm × 0.85 mm QFN package

简介

MMA044PP3属于RF/IF射频/中频RFID的射频放大器。由制造生产的MMA044PP3射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。