LNA, 4 - 18 GHz, 3x3 plastic QFN

The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a plastic leadless 3 mm × 3 mm surface-mount package that operates between 6 GHz and 18 GHz. The MMA044PP3 amplifier provides 17 dB of gain, 2.0 dB noise figure, 14 dBm Low-noise figure: 2.0 dB from 6 GHz–12 GHz\n50 Ω matched input/output\nHigh gain: 17 dB from 6 GHz–18 GHz\nBroadband performance: 6 GHz–18 GHz\nExcellent P1dB output power: 14 dBm\nHigh OIP3: 28 dBm\nSingle-supply operation: 4 V\nPackage: compact 16-lead 3 mm × 3 mm × 0.85 mm QFN package;

Microchip

微芯科技

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：MMIC, 6-18GHZ LNA, QFN PKG

Microchip

微芯科技

Evaluation PCB, MMA044PP5, LNA

ROHS

Microchip

微芯科技

Package：模具；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：MMIC, 6-18GHZ LNA, QFN PKG

Microchip

微芯科技

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR MMA044

Microchip

微芯科技