Open Drain NAND Gate

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Quad 2-Input Open Drain NAND Gate

General Description\nThese NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS integrated circuits. All gates have buffered outputs. All devices have high noise immunity and the ability to drive Typical propagation delay: 12 ns\nWide power supply range: 2± 6V\nLow quiescent current: 20mA maximum (74HC Series)\nLow input current: 1mA maximum\nFanout of 10 LS-TTL loads;

TI

德州仪器

Open Drain NAND Gate

文件：132.84 Kbytes 页数：4 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS

文件：418.51 Kbytes 页数：13 Pages

TI

德州仪器

QUADRUPLE2-INPUT POSITIVE-AND GATES WITH OPEN-DRAIN OUTPUTS

文件：570.13 Kbytes 页数：15 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS

文件：66.78 Kbytes 页数：4 Pages

TI

德州仪器