MILITARY TEMPERATURE SRAM in a 16-pin ceramic DIP package

64-Bit TRI-STATE Random Access Read/Write Memory

文件：606.92 Kbytes 页数：1 Pages

ROCHESTER

罗切斯特

Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V

64-Bit TRI-STATE Random Access Read/Write Memory

文件：605.09 Kbytes 页数：6 Pages

ROCHESTER

罗切斯特

64-Bit TRI-STATE Random Access Read/Write Memory

文件：130.18 Kbytes 页数：6 Pages

NSC

国半

MILITARY TEMPERATURE SRAM in a 16-pin ceramic DIP package

64-Bit TRI-STATE Random Access Read/Write Memory

文件：606.92 Kbytes 页数：1 Pages

ROCHESTER

罗切斯特

Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V

64-Bit TRI-STATE Random Access Read/Write Memory

文件：605.09 Kbytes 页数：6 Pages

ROCHESTER

罗切斯特

64-Bit TRI-STATE Random Access Read/Write Memory

General Description\nThe MM54C89/MM74C89 is a 16-word by 4-bit random access read/write memory. Inputs to the memory consist of four address lines, four data input lines, a write enable line and a memory enable line. The four binary address inputs are decoded internally to select each of the 16 poss ■ Wide supply voltage range                3.0V to 15V\n■ Guaranteed noise margin                  1.0V\n■ High noise immunity                        0.45 VCC (typ.)\n■ Low power                                     fan out of 2\n    TTL compatibility                             driving 74L\n■ Low po;

TI

德州仪器