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MMBT5451DW

NPN/PNPSiliconEpitaxialPlanarTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

MMBT5451DW

NPN/PNPSiliconEpitaxialPlanarTransistors

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

MMDT5451

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPair:15551TypeNPN 15401TypePNP •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •

DIODESDiodes Incorporated

美台半导体

MMDT5451

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMDT5451

NPN/PNPPlastic-EncapsulateTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •One5551-TypeNPN,One5401-TypePNP •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:KNM •Halogenfreeavailableuponrequestbyaddingsuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMDT5451

Plastic-EncapsulatedTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMDT5451

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •ComplementaryPairOne5551-TypeNPN One5401-TypePNP •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

DIODESDiodes Incorporated

美台半导体

MMDT5451

Multi-ChipGeneralPurposeTRANSISTOR(PNPandNPN)

FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:±200mA Collector-basevoltage V(BR)CBO:180/-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

MMDT5451

DUALTRANSISTOR

DUALTRANSISTOR(NPN+PNP) FEATURES ●EpitaxialPlanarDieConstruction ●IdealforlowPowerAmplificationandSwitching ●One5551(NPN),one5401(PNP)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

MMDT5451

SmallSurfaceMountTransistor

FEATURES ●Complementarypair. ●Idealforlowpoweramplification andswitching. ●Ultra-Smallsurfacemountpackage. ●Epitaxialplanardieconstruction. APPLICATIONS ●Generalswitchingandamplification.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

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