首页 >MM3904>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SmallSignalTransistors(NPN) FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904. | GE GE Industrial Company | GE | ||
NPNGeneralPurposeAmplifier Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof350mWattsofPowerDissipationand200mAIc. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •SurfaceMountSOT-23Package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable (MMBT3906) •IdealforMediumPowerAmplificationand Switching | TRSYS Transys Electronics | TRSYS | ||
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAut | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
GENERALPURPOSEAPPLIATION GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC |
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