3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Features ● Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF ● Compact and rugged construction offering weight and space savings ● Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “T”suffix to part number, s

文件：116.5 Kbytes 页数：3 Pages

MICROSEMI

美高森美

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Features ● Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF ● Compact and rugged construction offering weight and space savings ● Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “T”suffix to part number, s

文件：116.5 Kbytes 页数：3 Pages

MICROSEMI

美高森美

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Features ● Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF ● Compact and rugged construction offering weight and space savings ● Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “T”suffix to part number, s

文件：116.5 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SOP16

MITSUMI

三美

上传：深圳市拓亿芯电子有限公司

TSSOP20

MITSUMI

三美

上传：深圳市乐创天科技有限公司