首页 >MJF45H11GIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerTransistor80V,8ADualGeneralPurposePNP Designedforgeneralpurposepowerandswitchingapplications suchasregulators,convertersandpoweramplifiers.Housed inadvancedLFPAKpackage(5x6mm)withexcellentthermal conduction.Automotiveendapplicationsincludeairbagdeployment, powertraincontrolunits,andinstrumentcl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerTransistor80V,8ADualGeneralPurposePNP Designedforgeneralpurposepowerandswitchingapplications suchasregulators,convertersandpoweramplifiers.Housed inadvancedLFPAKpackage(5x6mm)withexcellentthermal conduction.Automotiveendapplicationsincludeairbagdeployment, powertraincontrolunits,andinstrumentcl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
80V,8APNPhighpowerbipolartransistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD45Hseries •Lowcollectoremittersaturationvoltage Applications •Powermanagement •Loadswitch •Linearmodevoltageregulator • | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
80V,8APNPhighpowerbipolartransistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD45Hseries •Lowcollectoremittersaturationvoltage •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplication | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
VERYFASTCMOS512/1K/2Kx9BiPORTFIFO
| STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
VERYFASTCMOS512/1K/2Kx9BiPORTFIFO
| STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
VERYFASTCMOS512/1K/2Kx9BiPORTFIFO
| STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
ComplementaryPowerTransistorsD2PAKforSurfaceMount Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@8.0A •F | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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