Power Transistor 80 V, 8 A Dual General Purpose PNP

Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl

文件：1.97976 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：5H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose PNP

Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl

文件：1.97976 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

80 V, 8A, Low VCE(sat) PNP Transistor

ON Semiconductor’s family of low VCE(sat)transistors are surface mount devices featuring ultra−low saturationvoltage, VCE(sat), and high current gain capability. These are designedfor use in lower voltage, high speed switching applications whereaffordable efficient energy control is important.Housed • Ultra−slim LFPAK4 Package (5 x 6 mm) with Wettable Flanks\n• Optimal Automated Optical Inspection (AOI)\n• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb-Free and are RoHS Compliant;

ONSEMI

安森美半导体

80 V, 8 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD45H series • Low collector emitter saturation voltage Applications • Power management • Load switch • Linear mode voltage regulator •

文件：367.24 Kbytes 页数：12 Pages

NEXPERIA

安世

80 V, 8 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD45H series • Low collector emitter saturation voltage • Qualified according to AEC-Q101 and recommended for use in automotive application

文件：368.63 Kbytes 页数：12 Pages

NEXPERIA

安世

VERY FAST CMOS 512/1K/2K x9BiPORT FIFO

文件：696.17 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体