MJE18004D2分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

MJE18004D2属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由安森美半导体公司制造生产的MJE18004D2晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。

The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Main features:

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ IC = 100 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

• Integrated Collector–Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic VCE(sat)

• “6 Sigma” Process Providing Tight and Reproductible Parameter

Spreads

It’s characteristics make it also suitable for PFC application.