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首页>MJD45H11-1G>详情
MJD45H11-1G_ONSEMI/安森美半导体_两极晶体管 - BJT 8A 80V 20W PNP华斯顿科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
MJD45H11-1G
- 功能描述:
两极晶体管 - BJT 8A 80V 20W PNP
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商
- 企业:
深圳市华斯顿科技有限公司
- 商铺:
- 联系人:
朱先生-余先生-夏小姐-张小姐
- 手机:
13925279453
- 询价:
- 电话:
0755-83777708/83777607/82799993
- 传真:
0755-83355559
- 地址:
深圳市福田区华强北上步工业区201栋4楼A18室/分公司:深圳市福田区华强北深纺大厦C座西7楼/市场部:华强北新亚洲电子市场3B047展销柜
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