首页 >MJD3055-DPAK>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
GeneralPurposeandSwitchingApplications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS) GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
SILICONEPITAXIALPLANARTRANSISTOR GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | WINGS | ||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL |
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