首页 >MJD20N03HDL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1.5ASwitch-ModePowerSupplywithLinearRegulator 1.5ASwitch-ModePowerSupplywithLinearRegulator The34701providesthemeanstoefficientlysupplytheFreescalePowerQUICC™I,II,andotherfamiliesofFreescalemicroprocessorsandDSPs.The34701incorporatesahighperformanceswitchingregulator,providingthedirectsupplyforthemi | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | freescale | ||
TMOSPOWERFETLOGICLEVEL20AMPERES30VOLTSRDS(on)=0.035OHM HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N-ChannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET20Amps,30Volts,LogicLevel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
30VN-ChannelMOSFET Features •Ultra−LowRDS(on),SingleBase,AdvancedTechnology •SPICEParametersAvailable •DiodeisCharacterizedforuseinBridgeCircuits •IDSSandV(on)SpecifiedatElevatedTemperatures •HighAvalancheEnergySpecified TypicalApplications •PowerSupplies •InductiveLoads • | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
20A,30V,0.025Ohm,N-ChannelPowerMOSFETs TheRFD20N03andRFD20N03SMN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplications | Intersil Intersil Corporation | Intersil |
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