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MJD127T4

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD127T4

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD127T4

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD127T4

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD127T4

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJD127T4G

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD127T4G

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD127T4G

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJD127T4G

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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